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Low Voltage Rectifier PJSEMI 1N5819WS Schottky Barrier Metal Silicon Junction with Surge Protection

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Low Voltage Rectifier PJSEMI 1N5819WS Schottky Barrier Metal Silicon Junction with Surge Protection

Reverse Leakage Current (Ir) : 10mA@40V

Non-Repetitive Peak Forward Surge Current : 9A

Operating Junction Temperature Range : -55℃~+150℃

Diode Configuration : Independent

Voltage - DC Reverse (Vr) (Max) : 40V

Voltage - Forward(Vf@If) : 600mV@1A

Current - Rectified : 1A

Description : Diode Independent 40V 1A Surface Mount SOD-323

Mfr. Part # : 1N5819WS

Model Number : 1N5819WS

Package : SOD-323

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Product Overview

The 1N5817WS-1N5819WS series are Schottky barrier rectifiers featuring a metal silicon junction for majority carrier conduction. They offer low power loss, high efficiency, and high current capability with a low forward voltage drop and high surge capability. These rectifiers are designed for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. They include guarding for overvoltage protection.

Product Attributes

Brand: pingjingsemi
Material: Metal silicon junction
Package: SOD-323

Technical Specifications

Parameter	Symbols	1N5817WS	1N5818WS	1N5819WS	Units
Maximum Repetitive Peak Reverse Voltage	VRRM	20	30	40	V
Maximum RMS voltage	VRMS	14	21	28	V
Maximum DC Blocking Voltage	VDC	20	30	40	V
Maximum Average Forward Rectified Current	IF(AV)	1			A
Peak Forward Surge Current, 8.3ms Single Half Sine-wave Superimposed On Rated Load (JEDEC)	IFSM	9			A
Maximum Instantaneous Forward Voltage at 1 A	VF	0.45	0.55	0.6	V
Maximum Instantaneous Forward Voltage at 3 A	VF	0.75	0.875	0.9	V
Maximum Instantaneous Reverse Current at TA = 25C Rated DC Reverse Voltage	IR	1			mA
Maximum Instantaneous Reverse Current at TA = 100C Rated DC Reverse Voltage	IR	10			mA
Typical Junction Capacitance	CJ	110			pF
Storage and Operating Junction Temperature Range	TJ, Tstg	-55 ~ +150			C

2102241433_PJSEMI-1N5819WS_C440261.pdf

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