| Sign In | Join Free | My chinacsw.com |
|
Non-Repetitive Peak Forward Surge Current : 2A
Reverse Leakage Current (Ir) : 2.5uA
Reverse Recovery Time (trr) : 6ns
Diode Configuration : Independent
Voltage - DC Reverse (Vr) (Max) : 70V
Pd - Power Dissipation : 225mW
Voltage - Forward(Vf@If) : 715mV
Current - Rectified : 200mA
Description : Diode Independent 70V 200mA Surface Mount SOT-23
Mfr. Part # : BAV99
Model Number : BAV99
Package : SOT-23
The BAW56/BAV70/BAV99 is a high-speed, plastic-encapsulated switching diode designed for various electronic applications. It features a fast switching time of less than 6ns, a power dissipation of 225mW, and a continuous forward current of 200mA. Known for its high stability, reliability, and low reverse leakage, this diode is suitable for demanding circuit designs.
| Model | Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|---|
| BAW56/BAV70/BAV99 | Reverse voltage | VR | 70 | V | |||
| Power Dissipation | PD | 225 | mW | ||||
| Operating junction temperature | Tj | 150 | |||||
| Storage temperature range | Ts | -65 | 150 | ||||
| Average rectified current | IO | 200 | mA | ||||
| Non-repetitive peak forward current | IFM | 400 | mA | ||||
| Peak forward surge current | IFSM | @tp=1ms; TA=25 | 2.0 | A | |||
| BAW56/BAV70/BAV99 | Maximum forward voltage | VF | IF=1mA | 0.715 | V | ||
| VF | IF=10mA | 0.855 | V | ||||
| VF | IF=50mA | 1.00 | V | ||||
| VF | IF=150mA | 1.25 | V | ||||
| Maximum reverse breakdown voltage | VRB | IR=100uA | 70 | V | |||
| BAW56/BAV70/BAV99 | Maximum reverse leakage current | IR | VR=70V | 2.5 | uA | ||
| Type junction capacitance | Cj | VR=1.0V, f=1MHz | 1.5 | pF | |||
| Reverse recovery time | TRR | IF=IR=10mA Irr=0.1 x IR, RL=100 | 6 | nS | |||
| BAW56/BAV70/BAV99 | Typical thermal resistance | RJA | 500 | /W | |||
| Marking | A1 | ||||||
| A4 | |||||||
| A7 |
|
|
Durable ElecSuper BAV99 diode with epoxy UL 94V 0 flammability rating and fast switching time under 6 nanoseconds Images |