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WEIDA 97A6 0.8A Triac for controlling AC power in middle and small resistance type load applications

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WEIDA 97A6 0.8A Triac for controlling AC power in middle and small resistance type load applications

Holding Current (Ih) : 7mA

Current - Gate Trigger(Igt) : 10mA

Voltage - On State(Vtm) : 1.5V

Average Gate Power Dissipation (PG(AV)) : 100mW

Current - On State(It(RMS)) : 800mA

Peak off - state voltage(Vdrm) : 800V

Current - Surge(Itsm@f) : 9A@50Hz

SCR Type : 1 TRIAC

Gate Trigger Voltage (Vgt) : 1.3V

Operating Temperature : -40℃~+125℃

Description : TRIAC 800V 0.8A Surface Mount SOT-23-3L

Mfr. Part # : 97A6

Model Number : 97A6

Package : SOT-23-3L

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Product Overview

The Jiangsu Weida Semiconductor 97A6/97A8 Series is a 0.8A Triac specifically designed for middle and small resistance type power loads. Its key advantages include low holding and latching current, making it ideal for applications requiring precise control of AC power.

Product Attributes

Brand: Jiangsu Weida Semiconductor Co., Ltd.
Series: 97A6/97A8
Current Rating: 0.8A
Revision: 1.0
Date: 2020 Mar.

Technical Specifications

Parameter	Symbol	Value	Unit	Test Condition	Quadrant	Notes
MAIN FEATURES
RMS on-state current	IT(RMS)	0.8	A
Repetitive peak off-state voltage	VDRM/VRRM	600/800	V
On-state voltage	VTM	≤1.5	V	ITM=1.1A tp=380s Tj=25		MAX
ABSOLUTE MAXIMUM RATINGS
Storage junction temperature range	Tstg	-40~150
Operating junction temperature range	Tj	-40~125
Repetitive peak off-state voltage	VDRM	600/800	V	Tj=25
Repetitive peak reverse voltage	VRRM	600/800	V	Tj=25
RMS on-state current	IT(RMS)	0.8	A
Non repetitive surge peak on-state current	ITSM	9	A	full cycle, F=50Hz
I2t value for fusing	I2t	0.45	A2s	tp=10ms
Critical rate of rise of on-state current	dI/dt	50	A/s	IG=2×IGT	--
Critical rate of rise of on-state current	dI/dt	10	A/s	IG=2×IGT
Peak gate current	IGM	1	A
Average gate power dissipation	PG(AV)	0.1	W
Peak gate power	PGM	5	W
ELECTRICAL CHARACTERISTICS
Gate trigger current	IGT	MAX 5	mA	VD=12V, RL=33Ω	--	Tj=25 unless otherwise specified
Gate trigger current	IGT	10	mA	VD=12V, RL=33Ω		Tj=25 unless otherwise specified
Gate trigger voltage	VGT	1.3	V		---	Tj=25 unless otherwise specified
Gate non-trigger voltage	VGD	MIN 0.2	V	VD=VDRM Tj=125	---	Tj=25 unless otherwise specified
Holding current	IH	MAX 7	mA	IT=100mA		Tj=25 unless otherwise specified
Latching current	IL	MAX 5	mA	IG=1.2IGT	--	Tj=25 unless otherwise specified
Latching current	IL	20	mA	IG=1.2IGT		Tj=25 unless otherwise specified
Critical rate of rise of off-state voltage	dV/dt	MIN 50	V/µs	VD=0.66×VDRM Tj=125Gate open		Tj=25 unless otherwise specified
STATIC CHARACTERISTICS
On-state voltage	VTM	MAX 1.5	V	ITM=1.1A tp=380s Tj=25
Off-state current	IDRM	MAX 5	µA	VDRM= VRRM Tj=25
Off-state current	IDRM	0.5	mA	VDRM= VRRM Tj=125
Reverse leakage current	IRRM	MAX 5	µA	VDRM= VRRM Tj=25
Reverse leakage current	IRRM	0.5	mA	VDRM= VRRM Tj=125
THERMAL RESISTANCES
junction to case(AC)	Rth(j-c)	75	°C/W	TO-92
junction to case(AC)	Rth(j-c)	45	°C/W	SOT-223/SOT-23-2L
junction to case(AC)	Rth(j-c)	60	°C/W	SOT-89-2L

2410122022_WEIDA-97A6_C5819974.pdf

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