| Absolute Maximum Ratings |
| Collector-Emitter Voltage (VCES) | | | | 1200 | V |
| Gate-Emitter Voltage (VGES) | | | | ±30 | V |
| Continuous Collector Current (IC) | (TC=25 ) | | | 80 | A |
| Continuous Collector Current (IC) | (TC=100) | | | 40 | A |
| Pulsed Collector Current (ICM) | (Note 1) | | | 90 | A |
| Diode Continuous Forward Current (IF) | (TC=100 ) | | | 40 | A |
| Diode Maximum Forward Current (IFM) | (Note 1) | | | 90 | A |
| Short Circuit Withstand Time (tsc) | | | | 10 | us |
| Maximum Power Dissipation (PD) | (TC=25 ) | | | 300 | W |
| Maximum Power Dissipation (PD) | (TC=100) | | | 110 | W |
| Operating Junction Temperature Range (TJ) | | -55 | | 150 | |
| Storage Temperature Range (TSTG) | | -55 | | 150 | |
| Thermal Characteristics |
| Thermal Resistance, Junction to case for IGBT (Rth j-c) | | | | 0.42 | / W |
| Thermal Resistance, Junction to case for Diode (Rth j-c) | | | | 0.8 | / W |
| Thermal Resistance, Junction to Ambient (Rth j-a) | | | | 40 | / W |
| Electrical Characteristics (TC=25 unless otherwise noted) |
| Collector-Emitter Breakdown Voltage (BVCES) | VGE= 0V, IC= 250uA | 1200 | - | - | V |
| Collector-Emitter Leakage Current (ICES) | VCE= 1200V, VGE= 0V | - | - | 100 | uA |
| Gate Leakage Current, Forward (IGES) | VGE=30V, VCE= 0V | - | - | 100 | nA |
| Gate Leakage Current, Reverse (IGES) | VGE= -30V, VCE= 0V | - | - | 100 | nA |
| Gate Threshold Voltage (VGE(th)) | VGE= VCE, IC= 250uA | 4.5 | - | 6.5 | V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | VGE=15V, IC= 40A | - | 2.1 | - | V |
| Total Gate Charge (Qg) | VCC=600V VGE=15V IC=40A | - | 107 | - | nC |
| Gate-Emitter Charge (Qge) | | - | 36 | - | nC |
| Gate-Collector Charge (Qgc) | | - | 58 | - | nC |
| Turn-on Delay Time (td(on)) | VCC=600V VGE=15V IC=40A RG=15Ω Inductive Load TC=25 °C | - | 87 | - | ns |
| Turn-on Rise Time (tr) | | - | 231 | - | ns |
| Turn-off Delay Time (td(off)) | | - | 158 | - | ns |
| Turn-off Fall Time (tf) | | - | 139 | - | ns |
| Turn-on Switching Loss (Eon) | | - | 6.1 | - | mJ |
| Turn-off Switching Loss (Eoff) | | - | 2.1 | - | mJ |
| Total Switching Loss (Ets) | | - | 8.2 | - | mJ |
| Input Capacitance (Cies) | VCE=25V VGE=0V f = 1MHz | - | 3000 | - | pF |
| Output Capacitance (Coes) | | - | 80 | - | pF |
| Reverse Transfer Capacitance (Cres) | | - | 30 | - | pF |
| Electrical Characteristics of Diode (TC=25 unless otherwise noted) |
| Diode Forward Voltage (VF) | IF=40A | - | 1.7 | 2.7 | V |
| Diode Reverse Recovery Time (trr) | VCE = 600V IF= 40A dIF/dt = 250A/us | - | 326 | - | ns |
| Diode peak Reverse Recovery Current (IRR) | | - | 15.6 | - | A |
| Diode Reverse Recovery Charge (QRR) | | - | 2843 | - | nC |
