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Nexperia PIMD3 115 Resistor Equipped Transistors in SOT457 Package with Integrated 10k Bias Resistors

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Nexperia PIMD3 115 Resistor Equipped Transistors in SOT457 Package with Integrated 10k Bias Resistors

Input Resistor : 10kΩ

Resistor Ratio : 1

Collector - Emitter Voltage VCEO : 50V

Description : 50V SOT-457 Single, Pre-Biased Bipolar Transistors RoHS

Mfr. Part # : PIMD3,115

Model Number : PIMD3,115

Package : SOT-457

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PIMD3 NPN/PNP Resistor-Equipped Transistors

Product Overview

The Nexperia PIMD3 is a series of NPN/PNP resistor-equipped transistors (RET) integrated into a compact SOT457 (SC-74) surface-mounted device (SMD) plastic package. These transistors feature built-in bias resistors (R1 = 10 k, R2 = 10 k), simplifying circuit design, reducing component count, and lowering pick-and-place costs. With a 100 mA output current capability, they are suitable for low current peripheral driving, controlling IC inputs, and replacing general-purpose transistors in digital applications. The PIMD3 series is AEC-Q101 qualified, making it suitable for automotive applications.

Product Attributes

  • Brand: Nexperia
  • Product Type: NPN/PNP Resistor-Equipped Transistors (RET)
  • Package Type: SOT457 (SC-74)
  • Built-in Resistors: R1 = 10 k, R2 = 10 k
  • Qualification: AEC-Q101

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
Per transistor, for the PNP transistor with negative polarity
VCEO Collector-emitter voltage Open base - - 50 V
IO Output current - - - 100 mA
R1 Bias resistor 1 (input) - 7 10 13 k
R2/R1 Bias resistor ratio - 0.8 1 1.2 -
VCBO Collector-base voltage Open emitter - - 50 V
VEBO Emitter-base voltage Open collector - - 10 V
VI Input voltage TR1 - -10 - -10 V
VI Input voltage TR2 - -40 - -40 V
IO Output current - - - 100 mA
Ptot Total power dissipation Tamb 25 C [1] - - 250 mW
Ptot Total power dissipation per device Tamb 25 C [1] - - 400 mW
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -65 - 150 C
Tstg Storage temperature - -65 - 150 C
Thermal characteristics
Rth(j-a) Thermal resistance from junction to ambient in free air [1] Per transistor - - 500 K/W
Rth(j-a) Thermal resistance from junction to ambient in free air [1] Per device - - 313 K/W
Characteristics
V(BR)CBO Collector-base breakdown voltage IC = 100 A; IE = 0 A; Tamb = 25 C 50 - - V
V(BR)CEO Collector-emitter breakdown voltage IC = 2 mA; IB = 0 A; Tamb = 25 C 50 - - V
ICBO Collector-base cut-off current VCB = 50 V; IE = 0 A; Tamb = 25 C - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tamb = 25 C - - 1 A
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tj = 150 C - - 5 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 mA; Tamb = 25 C - - 400 A
hFE DC current gain VCE = 5 V; IC = 5 mA; Tamb = 25 C 30 - - -
VCEsat Collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA; Tamb = 25 C - - 150 mV
VI(off) Off-state input voltage VCE = 5 V; IC = 100 A; Tamb = 25 C - 0.8 1.1 V
VI(on) On-state input voltage VCE = 0.3 V; IC = 10 mA; Tamb = 25 C 1.8 2.5 - V
R1 Bias resistor 1 (input) - 7 10 13 k
R2/R1 Bias resistor ratio - 0.8 1 1.2 -
TR1 (NPN)
Cc Collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - - 2.5 pF
fT Transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 C [1] - 230 - MHz
TR2 (PNP)
Cc Collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - - 3 pF
fT Transition frequency VCE = -5 V; IC = -10 mA; f = 100 MHz; Tamb = 25 C [1] - 180 - MHz

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided, 35 m copper, tin-plated and standard footprint.


2410121944_Nexperia-PIMD3-115_C478182.pdf


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