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SOD123 Schottky diode JSCJ B5818W plastic encapsulated for high frequency low voltage and free wheeling

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SOD123 Schottky diode JSCJ B5818W plastic encapsulated for high frequency low voltage and free wheeling

Non-Repetitive Peak Forward Surge Current : 9A

Reverse Leakage Current (Ir) : 1mA@30V

Operating Junction Temperature Range : -40℃~+125℃

Diode Configuration : Independent

Voltage - DC Reverse (Vr) (Max) : 30V

Voltage - Forward(Vf@If) : 875mV@3A

Current - Rectified : 1A

Description : Diode Independent 30V 1A Surface Mount SOD-123

Mfr. Part # : B5818W

Model Number : B5818W

Package : SOD-123

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Product Overview

The B5817W-5819W series are SOD-123 plastic-encapsulated Schottky barrier diodes designed for low voltage, high frequency applications. They are suitable for inverters, free-wheeling, and polarity protection.

Product Attributes

Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Package Type: SOD-123
Material: Plastic-Encapsulate
Marking (B5817W): SJ
Marking (B5818W): SK
Marking (B5819W): SL
Cathode Indicator: Marking bar
Molding Compound: Solid dot = Green, None = Normal

Technical Specifications

Parameter	Symbol	B5817W	B5818W	B5819W	Unit
Maximum Ratings and Electrical Characteristics (Single Diode @Ta=25)
Non-Repetitive Peak Reverse Voltage	VRM	20	30	40	V
Peak Repetitive Peak Reverse Voltage / Working Peak Reverse Voltage	VRRM / VRWM	20	30	40	V
DC Blocking Voltage	VR	20	30	40	V
RMS Reverse Voltage	VR(RMS)	14	21	28	V
Average Rectified Output Current	IO	1			A
Repetitive Peak Forward Current	IFRM	1.5			A
Power Dissipation	PD	500			mW
Thermal Resistance Junction to Ambient	RJA	200			/W
Operation Junction temperature Range	TJ	-40~+125
Storage Temperature Range	TSTG	-55~+150
Non-Repetitive Peak Forward Surge Current @t=8.3ms	IFSM	9			A
Electrical Characteristics (Ta=25 unless otherwise specified)
Reverse breakdown voltage (IR= 1mA)	V(BR)	20	30	40	V
Reverse voltage leakage current (VR=20V for B5817W, VR=30V for B5818W, VR=40V for B5819W)	IR	1			mA
Forward voltage (VF)	IF=1A	0.45	0.55	0.6	V
Forward voltage (VF)	IF=3A	0.75	0.875	0.9	V
Diode capacitance (VR=4V, f=1MHz)	CD	120			pF

2410121912_JSCJ-B5818W_C2910074.pdf

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